| PART |
Description |
Maker |
| SKB15N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC07T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient
|
Infineon Technologies AG
|
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
| SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKB15N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IXDN75N120 L209 |
High Voltage IGBT
IGBT Discretes: NPT IGBT
From old datasheet system
High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
